Transistor Noise in SiGe HBT RF Technology
نویسندگان
چکیده
This brief presents experimental and modeling results of device noise in SiGe HBT RF technology. By careful bandgap engineering, a simultaneous reduction of RF noise, 1 noise, and phase noise has been achieved. At a given , transistors with different base bandgap profiles show similar 1 noise. At a given , however, transistors with a higher (and hence lower RF noise) show lower 1 noise. Circuit analysis and simulation shows that the phase noise is reduced as well.
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